Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 IRLR3410TRPBF
- RS-artikelnummer:
- 830-3379
- Tillv. art.nr:
- IRLR3410TRPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 20 enheter)*
123,86 kr
(exkl. moms)
154,82 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 20 enhet(er) från den 29 december 2025
- Dessutom levereras 3 080 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 + | 6,193 kr | 123,86 kr |
*vägledande pris
- RS-artikelnummer:
- 830-3379
- Tillv. art.nr:
- IRLR3410TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 155mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 79W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-44-480 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 155mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 79W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-44-480 | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRLR024NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRLR3410TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRLR024NTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252 IRFR15N20DTRPBF