Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF
- RS-artikelnummer:
- 830-3372
- Tillv. art.nr:
- IRLR3636TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
148,18 kr
(exkl. moms)
185,22 kr
(inkl. moms)
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- Dessutom levereras 280 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 14,818 kr | 148,18 kr |
| 50 - 90 | 12,006 kr | 120,06 kr |
| 100 - 240 | 11,256 kr | 112,56 kr |
| 250 - 490 | 10,371 kr | 103,71 kr |
| 500 + | 9,643 kr | 96,43 kr |
*vägledande pris
- RS-artikelnummer:
- 830-3372
- Tillv. art.nr:
- IRLR3636TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 143W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 143W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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