Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252 IRLR3636TRLPBF
- RS-artikelnummer:
- 257-9458
- Tillv. art.nr:
- IRLR3636TRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
71,29 kr
(exkl. moms)
89,11 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 835 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 14,258 kr | 71,29 kr |
| 50 - 120 | 12,432 kr | 62,16 kr |
| 125 - 245 | 11,58 kr | 57,90 kr |
| 250 - 495 | 10,82 kr | 54,10 kr |
| 500 + | 7,84 kr | 39,20 kr |
*vägledande pris
- RS-artikelnummer:
- 257-9458
- Tillv. art.nr:
- IRLR3636TRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 143W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 143W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRLR series is the 60V single n channel power mosfet in a D-Pak package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below 100 kHz
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252 IRFR7540TRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252 IRFR1018ETRPBF