Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK IRLR120NTRPBF
- RS-artikelnummer:
- 830-3344
- Tillv. art.nr:
- IRLR120NTRPBF
- Tillverkare / varumärke:
- Infineon
Inte tillgänglig
RS kommer inte längre att lagerföra denna produkt.
Alternativ
Denna produkt är för närvarande inte tillgänglig. Vi rekommenderar denna produkt istället.
Var (i ett paket med 10)
11,293 kr
(exkl. moms)
14,116 kr
(inkl. moms)
- RS-artikelnummer:
- 830-3344
- Tillv. art.nr:
- IRLR120NTRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 265 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 20 nC @ 5 V | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 265 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 20 nC @ 5 V | ||
Width 6.22mm | ||
Length 6.73mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252 IRLR120NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRLR3110ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK IRFS3306PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK IRFR4620PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin DPAK IRFR3707ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRFU4510PBF

