ROHM RD3T100CN N-Channel MOSFET, 10 A, 200 V, 3-Pin DPAK RD3T100CNTL1

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RS-artikelnummer:
177-6805
Tillv. art.nr:
RD3T100CNTL1
Tillverkare / varumärke:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

200 V

Series

RD3T100CN

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

182 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.25V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

6.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

25 nC @ 10 V

Length

6.8mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

2.4mm

RoHS-status: Inte relevant

COO (Country of Origin):
TH
RD3T100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application

Low on-resistance
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Pb-free plating

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