DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 1.3 A, 30 V Enhancement, 6-Pin SC-88 DMN3190LDW-7
- RS-artikelnummer:
- 827-0480
- Tillv. art.nr:
- DMN3190LDW-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
59,15 kr
(exkl. moms)
73,95 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 5 350 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 200 | 1,183 kr | 59,15 kr |
| 250 - 450 | 0,694 kr | 34,70 kr |
| 500 - 1200 | 0,674 kr | 33,70 kr |
| 1250 - 2450 | 0,659 kr | 32,95 kr |
| 2500 + | 0,643 kr | 32,15 kr |
*vägledande pris
- RS-artikelnummer:
- 827-0480
- Tillv. art.nr:
- DMN3190LDW-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 335mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 2.2mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 335mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 2.2mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | ||
Width 1.35 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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