Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23

RS-artikelnummer:: 827-0134
Tillv. art.nr:: BSS215PH6327XTSA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23

Mängdrabatt möjlig

Antal (1 rulle med 250 enheter)*

481,00 kr

(exkl. moms)

601,25 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Dessutom levereras 8 000 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per rulle*
250 - 250	1,924 kr	481,00 kr
500 - 1000	1,443 kr	360,75 kr
1250 - 2250	1,347 kr	336,75 kr
2500 - 6000	1,251 kr	312,75 kr
6250 +	1,154 kr	288,50 kr

*vägledande pris

RS-artikelnummer:: 827-0134
Tillv. art.nr:: BSS215PH6327XTSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.18A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	-1.1V
	Typical Gate Charge Qg @ Vgs	3.6nC
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.9mm
	Standards/Approvals	No
	Width	1.3 mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.18A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series OptiMOS P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf -1.1V
	Typical Gate Charge Qg @ Vgs 3.6nC
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.9mm
	Standards/Approvals No
	Width 1.3 mm
	Automotive Standard AEC-Q101

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23

GRATIS leverans för online beställningar över 500,00 kr

Infineon OptiMOS™P P-Channel Power MOSFETs

MOSFET Transistors, Infineon

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