Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1

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Förpackningsalternativ:
RS-artikelnummer:
823-5500
Tillv. art.nr:
BSS308PEH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

OptiMOS P

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1mm

Width

1.3 mm

Length

2.9mm

Automotive Standard

AEC-Q101

Distrelec Product Id

304-44-428

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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