Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 6.5 A, 30 V Enhancement, 8-Pin SOIC IRF7319TRPBF
- RS-artikelnummer:
- 826-8879
- Tillv. art.nr:
- IRF7319TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
226,80 kr
(exkl. moms)
283,60 kr
(inkl. moms)
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- 200 enhet(er) är redo att levereras
- Dessutom levereras 3 040 enhet(er) från den 07 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 11,34 kr | 226,80 kr |
| 100 - 180 | 8,725 kr | 174,50 kr |
| 200 - 480 | 8,159 kr | 163,18 kr |
| 500 - 980 | 7,611 kr | 152,22 kr |
| 1000 + | 7,034 kr | 140,68 kr |
*vägledande pris
- RS-artikelnummer:
- 826-8879
- Tillv. art.nr:
- IRF7319TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 98mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -0.78V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 98mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -0.78V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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