Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 7.3 A, 30 V Enhancement, 8-Pin SOIC

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RS-artikelnummer:
168-7933
Tillv. art.nr:
IRF7389TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

7.3A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

98mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

0.78V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

5mm

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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