Name: ROHM SiC N-Channel MOSFET Transistor, 14 A, 1200 V, 3-Pin TO-247 SCT2280KEC
Brand: ROHM
SKU: 826-6902
Price: 100.91 SEK
Availability: Discontinued

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	14 A
	Maximum Drain Source Voltage	1200 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	388 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Maximum Power Dissipation	108 W
	Transistor Configuration	Single
	Transistor Material	SiC
	Length	15.9mm
	Width	20.95mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	36 nC @ 18 V
	Height	5.03mm

	Välj alla
	Brand ROHM
	Channel Type N
	Maximum Continuous Drain Current 14 A
	Maximum Drain Source Voltage 1200 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 388 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Maximum Power Dissipation 108 W
	Transistor Configuration Single
	Transistor Material SiC
	Length 15.9mm
	Width 20.95mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 36 nC @ 18 V
	Height 5.03mm

SCT2280KE, N-Channel SiC power MOSFET

N-Channel SiC MOSFET Transistors, ROHM

Silicon Carbide (SiC) MOSFETs feature lower switching losses and superior high temperature operating characteristics than their silicon counterparts and are ideally suited to high-efficiency high frequency switching applications.

MOSFET Transistors, ROHM Semiconductor

ROHM SiC N-Channel MOSFET Transistor, 14 A, 1200 V, 3-Pin TO-247 SCT2280KEC

N-Channel SiC MOSFET Transistors, ROHM

relaterade länkar