Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD036N04LGBTMA1

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RS-artikelnummer:
825-9364
Tillv. art.nr:
IPD036N04LGBTMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

59 nC @ 10 V

Transistor Material

Si

Length

6.73mm

Number of Elements per Chip

1

Height

2.41mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MY

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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