Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK IPB100N10S305ATMA1

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95,98 kr

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RS-artikelnummer:
823-5649
Tillv. art.nr:
IPB100N10S305ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

OptiMOS 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.25mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

135 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.4mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MY

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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