DiodesZetex DMN Type N-Channel MOSFET, 11 A, 12 V Enhancement, 3-Pin SC-59 DMN1019USNQ-7
- RS-artikelnummer:
- 244-1912
- Tillv. art.nr:
- DMN1019USNQ-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
104,40 kr
(exkl. moms)
130,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 675 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 4,176 kr | 104,40 kr |
| 50 - 75 | 4,09 kr | 102,25 kr |
| 100 - 225 | 3,02 kr | 75,50 kr |
| 250 - 975 | 2,943 kr | 73,58 kr |
| 1000 + | 2,872 kr | 71,80 kr |
*vägledande pris
- RS-artikelnummer:
- 244-1912
- Tillv. art.nr:
- DMN1019USNQ-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50.6nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Height | 1.3mm | |
| Length | 3.1mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50.6nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.2W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Height 1.3mm | ||
Length 3.1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in load switch, dc to dc Converters, power management functions.
Low on resistance
ESD Protected gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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