Vishay SiR418DP Type N-Channel MOSFET, 23 A, 40 V Enhancement, 8-Pin SO-8 SIR418DP-T1-GE3
- RS-artikelnummer:
- 814-1275
- Tillv. art.nr:
- SIR418DP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
120,29 kr
(exkl. moms)
150,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 02 juni 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 12,029 kr | 120,29 kr |
| 100 - 240 | 11,334 kr | 113,34 kr |
| 250 - 490 | 10,226 kr | 102,26 kr |
| 500 - 990 | 9,834 kr | 98,34 kr |
| 1000 + | 9,61 kr | 96,10 kr |
*vägledande pris
- RS-artikelnummer:
- 814-1275
- Tillv. art.nr:
- SIR418DP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SiR418DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Power Dissipation Pd | 39W | |
| Forward Voltage Vf | 0.71V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.26 mm | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SiR418DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Power Dissipation Pd 39W | ||
Forward Voltage Vf 0.71V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.26 mm | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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