onsemi PowerTrench Type N-Channel MOSFET, 6.1 A, 30 V Enhancement, 6-Pin SOT-23 FDC855N
- RS-artikelnummer:
- 809-0871
- Tillv. art.nr:
- FDC855N
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
117,04 kr
(exkl. moms)
146,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Begränsat lager
- Dessutom levereras 20 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 180 | 5,852 kr | 117,04 kr |
| 200 - 480 | 5,046 kr | 100,92 kr |
| 500 - 980 | 4,374 kr | 87,48 kr |
| 1000 - 1980 | 3,842 kr | 76,84 kr |
| 2000 + | 3,50 kr | 70,00 kr |
*vägledande pris
- RS-artikelnummer:
- 809-0871
- Tillv. art.nr:
- FDC855N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Length | 3mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Length 3mm | ||
Height 1mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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