onsemi Isolated 2 Type N-Channel MOSFET, 16 A, 30 V Enhancement, 8-Pin WDFN FDMC7208S
- RS-artikelnummer:
- 806-3490
- Tillv. art.nr:
- FDMC7208S
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
87,25 kr
(exkl. moms)
109,05 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 210 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 17,45 kr | 87,25 kr |
| 50 - 95 | 15,03 kr | 75,15 kr |
| 100 - 495 | 13,036 kr | 65,18 kr |
| 500 - 995 | 11,446 kr | 57,23 kr |
| 1000 + | 10,438 kr | 52,19 kr |
*vägledande pris
- RS-artikelnummer:
- 806-3490
- Tillv. art.nr:
- FDMC7208S
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.9W | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 0.75mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 3 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.9W | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 0.75mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 3 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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