onsemi Isolated 2 Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin WDFN
- RS-artikelnummer:
- 124-5405
- Tillv. art.nr:
- NTLJD4116NT1G
- Tillverkare / varumärke:
- onsemi
Denna bild representerar endast produktgruppen
Antal (1 rulle med 3000 enheter)*
9 927,00 kr
(exkl. moms)
12 408,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 3 000 enhet(er), redo att levereras
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 3,309 kr | 9 927,00 kr |
*vägledande pris
- RS-artikelnummer:
- 124-5405
- Tillv. art.nr:
- NTLJD4116NT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.78V | |
| Maximum Power Dissipation Pd | 2.3W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 0.75mm | |
| Width | 2 mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.78V | ||
Maximum Power Dissipation Pd 2.3W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 0.75mm | ||
Width 2 mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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