onsemi PowerTrench Type P-Channel MOSFET, 9.4 A, 20 V Enhancement, 6-Pin MLP FDMA910PZ

RS-artikelnummer:: 806-3488
Tillv. art.nr:: FDMA910PZ
Tillverkare / varumärke:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 9.4 A, 20 V Enhancement, 6-Pin MLP FDMA910PZ

Mängdrabatt möjlig

Antal (1 längd med 10 enheter)*

61,38 kr

(exkl. moms)

76,72 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 17 juli 2026

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Enheter	Per enhet	Per Längd*
10 - 90	6,138 kr	61,38 kr
100 - 240	5,914 kr	59,14 kr
250 - 490	5,768 kr	57,68 kr
500 - 990	5,622 kr	56,22 kr
1000 +	5,488 kr	54,88 kr

*vägledande pris

RS-artikelnummer:: 806-3488
Tillv. art.nr:: FDMA910PZ
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	9.4A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	MLP
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	34mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2.4W
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	21nC
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	0.75mm
	Width	2 mm
	Length	2mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 9.4A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type MLP
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 34mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2.4W
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 21nC
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 0.75mm
	Width 2 mm
	Length 2mm
	Standards/Approvals No
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 9.4 A, 20 V Enhancement, 6-Pin MLP FDMA910PZ

GRATIS leverans för online beställningar över 500,00 kr

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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