onsemi PowerTrench N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-247 FDH038AN08A1
- RS-artikelnummer:
- 806-3428
- Tillv. art.nr:
- FDH038AN08A1
- Tillverkare / varumärke:
- onsemi
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- RS-artikelnummer:
- 806-3428
- Tillv. art.nr:
- FDH038AN08A1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | TO-247 | |
| Series | PowerTrench | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 450 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V | |
| Width | 4.82mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.25V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.82mm | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-247 | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 450 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 125 nC @ 10 V | ||
Width 4.82mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.25V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.82mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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