onsemi PowerTrench N-Channel MOSFET, 211 A, 80 V, 3-Pin TO-220 FDP032N08B_F102
- RS-artikelnummer:
- 145-5484
- Tillv. art.nr:
- FDP032N08B_F102
- Tillverkare / varumärke:
- onsemi
Lagerinformation är för närvarande otillgänglig
- RS-artikelnummer:
- 145-5484
- Tillv. art.nr:
- FDP032N08B_F102
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 211 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TO-220 | |
| Series | PowerTrench | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.3 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 263 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.36mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 111 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.672mm | |
| Height | 15.215mm | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 211 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-220 | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.3 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 263 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 111 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.672mm | ||
Height 15.215mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- US
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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