onsemi NDT Type N-Channel MOSFET, 2.8 A, 60 V Enhancement, 4-Pin SOT-223 NDT014L
- RS-artikelnummer:
- 806-1255
- Tillv. art.nr:
- NDT014L
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
140,86 kr
(exkl. moms)
176,08 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 4 000 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 180 | 7,043 kr | 140,86 kr |
| 200 - 480 | 6,071 kr | 121,42 kr |
| 500 + | 5,264 kr | 105,28 kr |
*vägledande pris
- RS-artikelnummer:
- 806-1255
- Tillv. art.nr:
- NDT014L
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | NDT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Height | 1.7mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series NDT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Height 1.7mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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