onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement, 4-Pin SOT-223 NDT456P

Antal (1 förpackning med 5 enheter)*

99,99 kr

(exkl. moms)

124,99 kr

(inkl. moms)

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  • Dessutom levereras 40 enhet(er) från den 29 december 2025
  • Dessutom levereras 5 950 enhet(er) från den 05 januari 2026
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5 +19,998 kr99,99 kr

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Förpackningsalternativ:
RS-artikelnummer:
761-3971
Tillv. art.nr:
NDT456P
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

30V

Series

NDT

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

54mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3W

Typical Gate Charge Qg @ Vgs

47nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-65°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.7 mm

Height

1.7mm

Length

6.7mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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