Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2
- RS-artikelnummer:
- 753-2841
- Tillv. art.nr:
- BSS159NH6327XTSA2
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
73,25 kr
(exkl. moms)
91,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 25 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 2,93 kr | 73,25 kr |
| 125 - 475 | 1,505 kr | 37,63 kr |
| 500 - 1225 | 1,474 kr | 36,85 kr |
| 1250 + | 1,434 kr | 35,85 kr |
*vägledande pris
- RS-artikelnummer:
- 753-2841
- Tillv. art.nr:
- BSS159NH6327XTSA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 304-45-304 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Distrelec Product Id 304-45-304 | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23
- Infineon BSS138I Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- Infineon BSS138I Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23 BSS138IXTSA1
- Infineon SIPMOS® Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1