Infineon CoolMOS C3 Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-220 SPA11N60C3XKSA1
- RS-artikelnummer:
- 752-8467
- Tillv. art.nr:
- SPA11N60C3XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
68,52 kr
(exkl. moms)
85,64 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 44 enhet(er) från den 29 december 2025
- Dessutom levereras 10 enhet(er) från den 05 januari 2026
- Dessutom levereras 500 enhet(er) från den 16 juli 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 34,26 kr | 68,52 kr |
| 20 - 48 | 30,52 kr | 61,04 kr |
| 50 - 98 | 28,45 kr | 56,90 kr |
| 100 - 198 | 26,71 kr | 53,42 kr |
| 200 + | 24,695 kr | 49,39 kr |
*vägledande pris
- RS-artikelnummer:
- 752-8467
- Tillv. art.nr:
- SPA11N60C3XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS C3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 33W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.83mm | |
| Width | 4.85 mm | |
| Standards/Approvals | No | |
| Length | 10.65mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS C3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 33W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 9.83mm | ||
Width 4.85 mm | ||
Standards/Approvals No | ||
Length 10.65mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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