Infineon OptiMOS 3 Type N-Channel MOSFET, 49 A, 40 V Enhancement, 8-Pin TDSON

RS-artikelnummer:: 752-8164P
Tillv. art.nr:: BSC093N04LSGATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 49 A, 40 V Enhancement, 8-Pin TDSON

Mängdrabatt möjlig

Antal 50 enheter (levereras på en kontinuerlig remsa)*

296,60 kr

(exkl. moms)

370,75 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 26 475 enhet(er) från den 29 december 2025

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet
50 - 245	5,932 kr
250 - 1245	3,852 kr
1250 - 2495	3,046 kr
2500 +	2,868 kr

*vägledande pris

RS-artikelnummer:: 752-8164P
Tillv. art.nr:: BSC093N04LSGATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13.7mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	8.6nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	5.35 mm
	Length	6.35mm
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13.7mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 8.6nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 5.35 mm
	Length 6.35mm
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

Infineon OptiMOS™ 3 Series MOSFET, 49A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - BSC093N04LSGATMA1

This MOSFET is designed for efficient power management and control, playing a significant role in automation and electrical applications that require high performance. Its integration enhances circuit efficiency, contributing to overall system reliability and responsiveness in various environments.

Features & Benefits

• Provides a maximum continuous drain current of 49A

• Operates effectively in a voltage range of 40V

• Low drain-source resistance improves performance

• Supports surface mount design for easier integration

• High thermal stability with a maximum temperature rating of +150°C

• Suitable for diverse applications due to a wide gate threshold voltage range

Applications

• Ideal for power in automation and robotics

• Utilised in electric vehicle charging systems

• Suitable for power supply and conversion tasks

• Applied in motor control circuits and drives

• Used in telecommunications for efficient signal management

What type of load can this device handle effectively?

It can manage loads up to 49A, making it appropriate for high-current applications across various industries.

Is it compatible with surface mount technology?

Yes, it features a surface mount design, facilitating straightforward installation on PCBs.

What are the gate voltage limitations for this component?

The device has gate-source voltage limits of -20V to +20V, allowing flexibility in circuit designs.

Can it operate in extreme temperature conditions?

Yes, it effectively operates within a temperature range from -55°C to +150°C, ensuring functionality in harsh environments.

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.