DiodesZetex DMG Type P-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC DMG4413LSS-13
- RS-artikelnummer:
- 751-4102
- Tillv. art.nr:
- DMG4413LSS-13
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
63,13 kr
(exkl. moms)
78,91 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 1 580 enhet(er) levereras från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 20 | 6,313 kr | 63,13 kr |
| 30 - 120 | 5,197 kr | 51,97 kr |
| 130 - 620 | 4,552 kr | 45,52 kr |
| 630 - 1240 | 4,005 kr | 40,05 kr |
| 1250 + | 3,145 kr | 31,45 kr |
*vägledande pris
- RS-artikelnummer:
- 751-4102
- Tillv. art.nr:
- DMG4413LSS-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | DMG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.2W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.95mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 3.95 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series DMG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.2W | ||
Maximum Operating Temperature 150°C | ||
Length 4.95mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 3.95 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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