DiodesZetex Type N, Type P-Channel MOSFET, 60 V Enhancement, 8-Pin SOIC DMHC6070LSD-13
- RS-artikelnummer:
- 246-7504
- Tillv. art.nr:
- DMHC6070LSD-13
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
110,28 kr
(exkl. moms)
137,85 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 340 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 11,028 kr | 110,28 kr |
| 50 - 90 | 10,786 kr | 107,86 kr |
| 100 - 240 | 8,568 kr | 85,68 kr |
| 250 - 990 | 8,366 kr | 83,66 kr |
| 1000 + | 7,594 kr | 75,94 kr |
*vägledande pris
- RS-artikelnummer:
- 246-7504
- Tillv. art.nr:
- DMHC6070LSD-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.25Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 11.5nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.25Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 11.5nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodesZetex makes a new generation complementary MOSFET H-Bridge, that features low on-resistance achievable with low gate drive. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 60 V and maximum gate to source voltage is ±20 V 2 N-channel and 2 P-channels in a SOIC package It offers low on-resistance
relaterade länkar
- DiodesZetex Type N 60 V Enhancement, 8-Pin SOIC
- DiodesZetex DMP Type P-Channel MOSFET 60 V Enhancement, 8-Pin SOIC DMP6110SSS-13
- DiodesZetex DMP Type P-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- DiodesZetex Dual DMP 2 Type P-Channel MOSFET 60 V Enhancement, 8-Pin SOIC DMPH6050SSD-13
- DiodesZetex Type P 40 V Enhancement, 8-Pin SOIC DMHC4035LSDQ-13
- DiodesZetex Type N 40 V Enhancement, 8-Pin SOIC DMC4040SSDQ-13
- DiodesZetex Type N 40 V Enhancement, 8-Pin SOIC DMHC4035LSD-13
- DiodesZetex Type N 40 V Enhancement, 8-Pin SOIC DMC4050SSDQ-13
