onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N
- RS-artikelnummer:
- 739-0161
- Tillv. art.nr:
- NDC7002N
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
22,49 kr
(exkl. moms)
28,11 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 7 645 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 4,498 kr | 22,49 kr |
| 50 - 95 | 3,87 kr | 19,35 kr |
| 100 - 495 | 3,35 kr | 16,75 kr |
| 500 - 995 | 2,94 kr | 14,70 kr |
| 1000 + | 2,688 kr | 13,44 kr |
*vägledande pris
- RS-artikelnummer:
- 739-0161
- Tillv. art.nr:
- NDC7002N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 510mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 960mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 510mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 960mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Length 3mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
relaterade länkar
- onsemi Isolated 2 Type N-Channel Power MOSFET 50 V Enhancement, 6-Pin SOT-23
- onsemi Isolated 2 Type P 510 mA 6-Pin SOT-23
- onsemi Isolated 2 Type P 510 mA 6-Pin SOT-23 NDC7001C
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 60 V Enhancement, 6-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 60 V Enhancement, 6-Pin SOT-23 NDC7003P
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23