Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 870 mA, 20 V Enhancement, 6-Pin SC-88 PMGD280UN,115
- RS-artikelnummer:
- 725-8329
- Tillv. art.nr:
- PMGD280UN,115
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
67,12 kr
(exkl. moms)
83,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 300 enhet(er) från den 29 december 2025
- Dessutom levereras 2 240 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 3,356 kr | 67,12 kr |
| 100 - 180 | 3,02 kr | 60,40 kr |
| 200 + | 2,685 kr | 53,70 kr |
*vägledande pris
- RS-artikelnummer:
- 725-8329
- Tillv. art.nr:
- PMGD280UN,115
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 870mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | Trench MOSFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 0.83V | |
| Maximum Power Dissipation Pd | 400mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.89nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 870mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series Trench MOSFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 0.83V | ||
Maximum Power Dissipation Pd 400mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.89nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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