onsemi Type N-Channel MOSFET, 20 A, 60 V Enhancement, 3-Pin TO-252 NTD5867NLT4G
- RS-artikelnummer:
- 719-2901
- Tillv. art.nr:
- NTD5867NLT4G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
86,58 kr
(exkl. moms)
108,225 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 10 enhet(er) från den 29 december 2025
- Sista 5 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 17,316 kr | 86,58 kr |
| 50 - 95 | 14,918 kr | 74,59 kr |
| 100 - 495 | 12,924 kr | 64,62 kr |
| 500 - 995 | 11,38 kr | 56,90 kr |
| 1000 + | 10,348 kr | 51,74 kr |
*vägledande pris
- RS-artikelnummer:
- 719-2901
- Tillv. art.nr:
- NTD5867NLT4G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 36W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.38mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 36W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.38mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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