Vishay IRFP250 Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250PBF
- RS-artikelnummer:
- 708-5156
- Tillv. art.nr:
- IRFP250PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
188,94 kr
(exkl. moms)
236,175 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 55 enhet(er) är redo att levereras
- Dessutom levereras 1 010 enhet(er) från den 09 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 37,788 kr | 188,94 kr |
| 10 - 20 | 32,144 kr | 160,72 kr |
| 25 - 45 | 28,336 kr | 141,68 kr |
| 50 - 120 | 26,454 kr | 132,27 kr |
| 125 + | 24,596 kr | 122,98 kr |
*vägledande pris
- RS-artikelnummer:
- 708-5156
- Tillv. art.nr:
- IRFP250PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRFP250 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 190W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Width | 5.31 mm | |
| Height | 20.7mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRFP250 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 190W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Width 5.31 mm | ||
Height 20.7mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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