DiodesZetex ZXMN6A11G Type N-Channel MOSFET, 4.4 A, 60 V Enhancement, 4-Pin SOT-223 ZXMN6A11GTA
- RS-artikelnummer:
- 708-2526
- Tillv. art.nr:
- ZXMN6A11GTA
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
38,53 kr
(exkl. moms)
48,16 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 8 965 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 7,706 kr | 38,53 kr |
| 50 - 95 | 4,48 kr | 22,40 kr |
| 100 - 245 | 4,01 kr | 20,05 kr |
| 250 - 495 | 3,404 kr | 17,02 kr |
| 500 + | 2,89 kr | 14,45 kr |
*vägledande pris
- RS-artikelnummer:
- 708-2526
- Tillv. art.nr:
- ZXMN6A11GTA
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | ZXMN6A11G | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Forward Voltage Vf | 0.95V | |
| Maximum Power Dissipation Pd | 3.9W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Automotive Standard | AEC-Q100 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series ZXMN6A11G | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Forward Voltage Vf 0.95V | ||
Maximum Power Dissipation Pd 3.9W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Automotive Standard AEC-Q100 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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