Infineon HEXFET Type N-Channel Power MOSFET, 350 A, 75 V Enhancement, 3-Pin TO-247AC IRFP4368PBF

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RS-artikelnummer:
688-7002
Tillv. art.nr:
IRFP4368PBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

350A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-247AC

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.85mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

520W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

38nC

Maximum Operating Temperature

175°C

Height

20.7mm

Length

15.87mm

Width

5.31 mm

Standards/Approvals

No

Automotive Standard

No

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


Motor Control MOSFET


Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET


A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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