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Infineon HEXFET Type N-Channel MOSFET, 44 A, 250 V Enhancement, 3-Pin TO-247

RS-artikelnummer:: 688-6998
Tillv. art.nr:: IRFP4229PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 44 A, 250 V Enhancement, 3-Pin TO-247

Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

77,29 kr

(exkl. moms)

96,612 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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2 enhet(er) levereras från den 13 januari 2026

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Enheter	Per enhet	Per förpackning*
2 - 18	38,645 kr	77,29 kr
20 - 48	36,735 kr	73,47 kr
50 - 98	31,305 kr	62,61 kr
100 - 198	29,345 kr	58,69 kr
200 +	27,105 kr	54,21 kr

*vägledande pris

RS-artikelnummer:: 688-6998
Tillv. art.nr:: IRFP4229PBF
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	250V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	46mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	72nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	310W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	15.9mm
	Standards/Approvals	No
	Width	5.3 mm
	Height	20.3mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 250V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 46mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 72nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 310W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 15.9mm
	Standards/Approvals No
	Width 5.3 mm
	Height 20.3mm
	Automotive Standard No

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