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Infineon HEXFET Type N-Channel MOSFET, 44 A, 250 V Enhancement, 3-Pin TO-247 IRFP4229PBF

RS-artikelnummer:: 124-9015
Tillv. art.nr:: IRFP4229PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 44 A, 250 V Enhancement, 3-Pin TO-247 IRFP4229PBF

Mängdrabatt möjlig

Antal (1 rör med 25 enheter)*

779,40 kr

(exkl. moms)

974,25 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 30 mars 2026

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Enheter	Per enhet	Per Rør*
25 - 25	31,176 kr	779,40 kr
50 - 100	25,876 kr	646,90 kr
125 - 225	24,318 kr	607,95 kr
250 - 475	23,072 kr	576,80 kr
500 +	22,136 kr	553,40 kr

*vägledande pris

RS-artikelnummer:: 124-9015
Tillv. art.nr:: IRFP4229PBF
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	46mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	72nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	310W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	20.3mm
	Standards/Approvals	No
	Width	5.3 mm
	Length	15.9mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 46mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 72nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 310W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 20.3mm
	Standards/Approvals No
	Width 5.3 mm
	Length 15.9mm
	Automotive Standard No

COO (Country of Origin):: MX

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