Infineon HEXFET N-Channel MOSFET, 35 A, 150 V, 3-Pin TO-220AB IRFB4615PBF

RS-artikelnummer:: 688-6967
Tillv. art.nr:: IRFB4615PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET N-Channel MOSFET, 35 A, 150 V, 3-Pin TO-220AB IRFB4615PBF

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RS-artikelnummer:: 688-6967
Tillv. art.nr:: IRFB4615PBF
Tillverkare / varumärke:: Infineon

MOSFET N-ch HEXFET 150V 35A TO220AB
ESD Control Selection Guide V1

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Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	150 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	39 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	144 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.83mm
Typical Gate Charge @ Vgs	26 nC @ 10 V
Length	10.67mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Height	9.02mm
Minimum Operating Temperature	-55 °C

Infineon HEXFET N-Channel MOSFET, 35 A, 150 V, 3-Pin TO-220AB IRFB4615PBF

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