onsemi QFET Type N-Channel MOSFET, 8 A, 1 kV Enhancement, 3-Pin TO-3PN FQA8N100C

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Förpackningsalternativ:
RS-artikelnummer:
671-4972
Tillv. art.nr:
FQA8N100C
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

1kV

Series

QFET

Package Type

TO-3PN

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.45Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

53nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

225W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

15.8mm

Height

18.9mm

Width

5 mm

Automotive Standard

No

COO (Country of Origin):
MY

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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