onsemi QFET Type N-Channel MOSFET, 8 A, 1 kV Enhancement, 3-Pin TO-3PN

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963,54 kr

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1 204,44 kr

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  • Dessutom levereras 1 170 enhet(er) från den 19 januari 2026
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Per Rør*
30 - 3032,118 kr963,54 kr
60 - 12031,155 kr934,65 kr
150 - 27030,191 kr905,73 kr
300 +28,903 kr867,09 kr

*vägledande pris

RS-artikelnummer:
146-1970
Tillv. art.nr:
FQA8N100C
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-3PN

Series

QFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.45Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

225W

Typical Gate Charge Qg @ Vgs

53nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Length

15.8mm

Standards/Approvals

No

Height

18.9mm

Width

5 mm

Automotive Standard

No

COO (Country of Origin):
CN

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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