onsemi UniFET Type N-Channel MOSFET, 51 A, 250 V Enhancement, 3-Pin TO-220 FDP51N25

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124,63 kr

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155,79 kr

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  • Dessutom levereras 35 enhet(er) från den 29 december 2025
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5 +24,926 kr124,63 kr

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Förpackningsalternativ:
RS-artikelnummer:
671-4843
Tillv. art.nr:
FDP51N25
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

250V

Series

UniFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

320W

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4.83 mm

Standards/Approvals

No

Height

9.4mm

Length

10.67mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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