onsemi UniFET Type N-Channel MOSFET, 61 A, 200 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 145-5356
- Tillv. art.nr:
- FDP61N20
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
670,65 kr
(exkl. moms)
838,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 550 enhet(er) levereras från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 13,413 kr | 670,65 kr |
| 100 + | 12,609 kr | 630,45 kr |
*vägledande pris
- RS-artikelnummer:
- 145-5356
- Tillv. art.nr:
- FDP61N20
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | UniFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 417W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series UniFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 417W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
relaterade länkar
- onsemi UniFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 FDP61N20
- onsemi UniFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 FDPF39N20
- onsemi UniFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220