onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM

RS-artikelnummer:: 671-0949
Tillv. art.nr:: FQD11P06TM
Tillverkare / varumärke:: onsemi

onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

83,10 kr

(exkl. moms)

103,90 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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185 enhet(er) är redo att levereras
Dessutom levereras 1 405 enhet(er) från den 05 januari 2026

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Enheter	Per enhet	Per förpackning*
5 - 45	16,62 kr	83,10 kr
50 - 95	14,336 kr	71,68 kr
100 - 495	12,41 kr	62,05 kr
500 - 995	10,908 kr	54,54 kr
1000 +	9,924 kr	49,62 kr

*vägledande pris

RS-artikelnummer:: 671-0949
Tillv. art.nr:: FQD11P06TM
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.4A
	Maximum Drain Source Voltage Vds	60V
	Series	QFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	185mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	13nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	-4V
	Maximum Operating Temperature	150°C
	Width	6.1 mm
	Standards/Approvals	No
	Height	2.3mm
	Length	6.6mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.4A
	Maximum Drain Source Voltage Vds 60V
	Series QFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 185mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 13nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf -4V
	Maximum Operating Temperature 150°C
	Width 6.1 mm
	Standards/Approvals No
	Height 2.3mm
	Length 6.6mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.