onsemi QFET Type N-Channel MOSFET, 55 A, 100 V Enhancement, 3-Pin TO-263 FQB55N10TM

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118,38 kr

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147,975 kr

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  • Dessutom levereras 1 250 enhet(er) från den 29 december 2025
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5 - 4523,676 kr118,38 kr
50 - 9520,406 kr102,03 kr
100 - 49517,696 kr88,48 kr
500 +15,568 kr77,84 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
671-0914
Tillv. art.nr:
FQB55N10TM
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

100V

Series

QFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

3.75W

Typical Gate Charge Qg @ Vgs

75nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

9.65 mm

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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