onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement, 3-Pin TO-263 FQB27P06TM

RS-artikelnummer:: 671-0873
Tillv. art.nr:: FQB27P06TM
Tillverkare / varumärke:: onsemi

onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement, 3-Pin TO-263 FQB27P06TM

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

132,94 kr

(exkl. moms)

166,175 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Försörjningsbrist

På grund av begränsningar i försörjningskedjan tilldelas lager allt eftersom det blir tillgängligt. Du kan restbeställa denna produkt och vi kommer att uppdatera dig med ett leveransdatum så snart som möjligt.

Enheter	Per enhet	Per förpackning*
5 - 45	26,588 kr	132,94 kr
50 - 95	22,938 kr	114,69 kr
100 - 495	19,868 kr	99,34 kr
500 +	17,472 kr	87,36 kr

*vägledande pris

RS-artikelnummer:: 671-0873
Tillv. art.nr:: FQB27P06TM
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	QFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	33nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.75W
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	-4V
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Width	9.65 mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series QFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 33nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.75W
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf -4V
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Width 9.65 mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.