onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

RS-artikelnummer:: 671-0643
Tillv. art.nr:: FDS6900AS
Tillverkare / varumärke:: onsemi

onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

Antal (1 förpackning med 5 enheter)*

15,79 kr

(exkl. moms)

19,74 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per förpackning*
5 +	3,158 kr	15,79 kr

*vägledande pris

RS-artikelnummer:: 671-0643
Tillv. art.nr:: FDS6900AS
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	6.9 A, 8.2 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Series	PowerTrench, SyncFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	22 mΩ, 27 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Series
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	10 nC @ 10 V, 11 nC @ 10 V
	Transistor Material	Si
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Width	3.99mm
	Number of Elements per Chip	2
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Välj alla
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 6.9 A, 8.2 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Series PowerTrench, SyncFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 22 mΩ, 27 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Series
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 10 nC @ 10 V, 11 nC @ 10 V
	Transistor Material Si
	Length 5mm
	Maximum Operating Temperature +150 °C
	Width 3.99mm
	Number of Elements per Chip 2
	Height 1.5mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: MY

PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor

Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor

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