onsemi PowerTrench Type N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6690A

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

48,16 kr

(exkl. moms)

60,20 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 2 530 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
5 - 459,632 kr48,16 kr
50 - 958,31 kr41,55 kr
100 - 4957,212 kr36,06 kr
500 - 9956,316 kr31,58 kr
1000 +5,756 kr28,78 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
671-0624
Tillv. art.nr:
FDS6690A
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

0.7V

Maximum Operating Temperature

150°C

Height

1.5mm

Length

5mm

Width

4 mm

Standards/Approvals

No

Automotive Standard

No

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

relaterade länkar