onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ

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5 - 4510,394 kr51,97 kr
50 - 958,982 kr44,91 kr
100 - 4957,772 kr38,86 kr
500 - 9956,832 kr34,16 kr
1000 +6,204 kr31,02 kr

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Förpackningsalternativ:
RS-artikelnummer:
671-0598
Tillv. art.nr:
FDS6675BZ
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

44nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Length

5mm

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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