onsemi FDN337N Type N-Channel MOSFET, 2.2 A, 30 V Enhancement, 3-Pin SOT-23 FDN337N

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49,84 kr

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62,30 kr

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  • Dessutom levereras 710 enhet(er) från den 19 januari 2026
  • Dessutom levereras 170 enhet(er) från den 19 januari 2026
  • Dessutom levereras 9 540 enhet(er) från den 26 januari 2026
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10 - 904,984 kr49,84 kr
100 - 2404,301 kr43,01 kr
250 - 4903,718 kr37,18 kr
500 - 9903,282 kr32,82 kr
1000 +2,979 kr29,79 kr

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Förpackningsalternativ:
RS-artikelnummer:
671-0429
Distrelec artikelnummer:
304-43-435
Tillv. art.nr:
FDN337N
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

30V

Series

FDN337N

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7nC

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

1.4 mm

Height

0.94mm

Length

2.92mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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