onsemi FDN337N Type N-Channel MOSFET, 2.2 A, 30 V Enhancement, 3-Pin SOT-23

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5 730,00 kr

(exkl. moms)

7 170,00 kr

(inkl. moms)

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  • Dessutom levereras 9 000 enhet(er) från den 29 december 2025
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RS-artikelnummer:
124-1703
Tillv. art.nr:
FDN337N
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

FDN337N

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.92mm

Height

0.94mm

Width

1.4 mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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