DiodesZetex Type N-Channel MOSFET, 600 mA, 60 V Enhancement, 3-Pin E-Line ZVN4206ASTZ
- RS-artikelnummer:
- 669-7717
- Tillv. art.nr:
- ZVN4206ASTZ
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
71,06 kr
(exkl. moms)
88,82 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 2 400 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 20 | 7,106 kr | 71,06 kr |
| 30 - 90 | 6,238 kr | 62,38 kr |
| 100 - 490 | 6,104 kr | 61,04 kr |
| 500 - 990 | 5,936 kr | 59,36 kr |
| 1000 + | 5,768 kr | 57,68 kr |
*vägledande pris
- RS-artikelnummer:
- 669-7717
- Tillv. art.nr:
- ZVN4206ASTZ
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.77mm | |
| Width | 2.41 mm | |
| Height | 4.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -4V | ||
Maximum Operating Temperature 150°C | ||
Length 4.77mm | ||
Width 2.41 mm | ||
Height 4.01mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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